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TC58BYG1S3HBAI6 High Capacity Flash Memory Chip , 2gb Nand Flash Drive 67VFBGA

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TC58BYG1S3HBAI6 High Capacity Flash Memory Chip , 2gb Nand Flash Drive 67VFBGA

Model Number : TC58BYG1S3HBAI6

Certification : Original Parts

MOQ : 1 piece

Price : Negotiation

Payment Terms : T/T, PayPal, Western Union, Escrow and others

Supply Ability : 500-2000pcs per month

Delivery Time : 3-5 work days

Packaging Details : 10cm X 10cm X 5cm

Item numbe : TC58BYG1S3HBAI6

Denisty : 2Gb （256M x 8）

Products Category : Memory & Flash Memory

Memory interface : Parallel

Volt. : 1.7 V ~ 1.95 V

Technology : FLASH - NAND (TLC)

Temp. : -40°C ~ 85°C（TA）

Package : 67-VFBGA

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Flash Memory Chip TC58BYG1S3HBAI6 IC FLASH 2G PARALLEL 67VFBGA

he TC58BYG1S3HBAI6 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).

The TC58BYG1S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

The TC58BYG1S3HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally

Technical Attributes

Find Similar Parts

	Description	Value
	Architecture	Sectored
	Block Organization	Symmetrical
	Cell Type	SLC NAND
	Density	2 Gb
	ECC Support	Yes
	Interface Type	Serial
	Maximum Operating Supply Voltage	1.95 V
	Minimum Operating Supply Voltage	1.7 V
	Mounting	Surface Mount
	Number of Bits per Word	8 Bit
	Number of Words	256 MWords
	Operating Temperature	-40 to 85 °C
	Page Size	2 KB
	Pin Count	67
	Product Dimensions	8 x 6.5 x 0.74(Max)
	Programming Voltage	1.7 to 1.95 V
	Screening Level	Industrial
	Sector Size	128 x 2048 KB
	Supplier Package	VFBGA
	Timing Type	Synchronous
	Typical Operating Supply Voltage	1.8000 V

Feature:

TC58BYG1S3HBAI6 High Capacity Flash Memory Chip , 2gb Nand Flash Drive 67VFBGA

Product Tags:

nand type flash memory

flash memory ic chip

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